Enhanced Process Integration and Device Performance of Carbon Nanotubes via Flocculation
نویسندگان
چکیده
منابع مشابه
investigation of the electronic properties of carbon and iii-v nanotubes
boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...
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ژورنال
عنوان ژورنال: Small Methods
سال: 2018
ISSN: 2366-9608,2366-9608
DOI: 10.1002/smtd.201800189